Advanced active pixel architectures in standard CMOS technology

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Active Pixel Sensor Architectures in Standard CMOS Technology for Charged-Particle Detection

The adoption of active pixel sensors (APS), based on an “active” read-out scheme implemented at the pixel level, has been recently proposed for charged-particle detection purposes [1, 2]. Very good performances have been obtained, in particular by exploiting some peculiar features of the actual fabrication technology (i.e., the presence of a relatively deep and low-doped epitaxial layer). In th...

متن کامل

Active Pixel Sensors Fabricated in a Standard 0.18 urn CMOS Technology

CMOS image sensors have benefited from technology scaling down to O.351um with only minor process modifications. Several studies have predicted that below O.25m, it will become difficult, if not impossible to implement CMOS image sensors with acceptable performance without more significant process modifications. To explore the imaging performance of CMOS image sensors fabricated in standard O.1...

متن کامل

Active Pixel Sensors Fabricated in a Standard 0.18 um CMOS Technology

CMOS image sensors have benefited from technology scaling down to 0.35μm with only minor process modifications. Several studies have predicted that below 0.25μm, it will become difficult, if not impossible to implement CMOS image sensors with acceptable performance without more significant process modifications. To explore the imaging performance of CMOS image sensors fabricated in standard 0.1...

متن کامل

Standard CMOS active pixel image sensors for multimedia applications

The task of image acquisition is completely dominated by CCD-based sensors fabricated on specialized process lines. These devices provide an essentially passive means of detecting photons and moving image data across chip. We argue that line widths in standard CMOS have been reduced to the point where it is practical to locate transistors and hence provide gain within each detector of an imager...

متن کامل

Near - 100 % fill factor standard CMOS active pixel

Bart DIERICKX, Guy MEYNANTS, Danny SCHEFFER IMEC, Kapeldreef 75, B-3001 Leuven, Belgium • [email protected]

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Nuclear Science

سال: 2005

ISSN: 0018-9499

DOI: 10.1109/tns.2005.856620